Semiconductor device including protruding conductor cell regions

ABSTRACT

A semiconductor device including a cell region which includes components representing a circuit arranged such that a rectangular virtual perimeter is drawable around substantially all of the components and includes first and second virtual side boundaries, the components including: a first conductor which is an intra-cell conductor of a first signal that is internal to the circuit, a first end of the intra-cell conductor being substantially a minimum virtual boundary offset inside the first virtual side boundary; and a second conductor of a second signal of the circuit; a portion of the second conductor having a first end which extends outside the first virtual side boundary by a protrusion length substantially greater than the minimum virtual boundary offset; and a second end of the second conductor being receded inside the second virtual side boundary by a first gap substantially greater than the minimum virtual boundary offset.

PRIORITY CLAIM

The instant application is a continuation application of U.S.application Ser. No. 17/131,038, filed Dec. 22, 2020, which is adivisional application of U.S. application Ser. No. 16/445,931, filedJun. 19, 2019, now U.S. Pat. No. 10,878,165, which is a non-provisionalapplication claiming priority to Provisional Application No. 62/698,779,filed Jul. 16, 2018, the entire contents of each of which areincorporated by reference herein.

BACKGROUND

An integrated circuit (“IC”) includes one or more semiconductor devices.One way in which to represent a semiconductor device is with a plan viewdiagram referred to as a layout diagram. Layout diagrams are generatedin a context of design rules. A set of design rules imposes constraintson the placement of corresponding patterns in a layout diagram, e.g.,geographic/spatial restrictions, connectivity restrictions, or the like.Often, a set of design rules includes a subset of design rulespertaining to the spacing and other interactions between patterns inadjacent or abutting cells where the patterns represent conductors in alayer of metallization.

Typically, a set of design rules is specific to a process node by whichwill be fabricated a semiconductor device based on a layout diagramresulting. The design rule set compensates for variability of thecorresponding process node. Such compensation increases the likelihoodthat an actual semiconductor device resulting from a layout diagram willbe an acceptable counterpart to the virtual device on which the layoutdiagram is based.

BRIEF DESCRIPTION OF THE DRAWINGS

One or more embodiments are illustrated by way of example, and not bylimitation, in the figures of the accompanying drawings, whereinelements having the same reference numeral designations represent likeelements throughout. The drawings are not to scale, unless otherwisedisclosed.

FIG. 1 is a block diagram of a semiconductor device in accordance withat least one embodiment of the present disclosure.

FIG. 2A is a layout diagram of instances of a default cell-template, inaccordance with some embodiments.

FIG. 2B is a layout diagram of a refinement of the layout diagram ofFIG. 2A, in accordance with some embodiments.

FIG. 2C is a layout diagram of a refinement of the layout diagram ofFIG. 2B, in accordance with some embodiments.

FIG. 2D is a layout diagram of a refinement of the layout diagram ofFIG. 2C, in accordance with some embodiments.

FIG. 2E is a layout diagram 200E of a refinement of the layout diagramof FIG. 2D, in accordance with some embodiments.

FIG. 2F is a layout diagram 200F of a refinement of the layout diagramof FIG. 2E, in accordance with some embodiments.

FIG. 3A is a cross-section of a cell region of a semiconductor device,in accordance with some embodiments.

FIG. 3B is a cross-section of a cell region of a semiconductor device,in accordance with some embodiments.

FIG. 4 is a layout diagram, in accordance with some embodiments.

FIG. 5 is a flowchart of a method of generating a layout diagram, inaccordance with some embodiments.

FIG. 6 is a flowchart of a method of generating a layout diagram, inaccordance with some embodiments.

FIG. 7 is a block diagram of an electronic design automation (EDA)system in accordance with some embodiments.

FIG. 8 is a block diagram of a semiconductor device manufacturingsystem, and an IC manufacturing flow associated therewith, in accordancewith some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components, materials, values, steps,operations, materials, arrangements, or the like, are described below tosimplify the present disclosure. These are, of course, merely examplesand are not intended to be limiting. Other components, values,operations, materials, arrangements, or the like, are contemplated. Forexample, the formation of a first feature over or on a second feature inthe description that follows may include embodiments in which the firstand second features are formed in direct contact, and may also includeembodiments in which additional features may be formed between the firstand second features, such that the first and second features may not bein direct contact. In addition, the present disclosure may repeatreference numerals and/or letters in the various examples. Thisrepetition is for the purpose of simplicity and clarity and does not initself dictate a relationship between the various embodiments and/orconfigurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In some embodiments, a method of generating a layout diagram includesgenerating a shell, which includes wiring patterns in a first layer ofmetallization, the wiring patterns having long axes which aresubstantially aligned with corresponding tracks that extend in a firstdirection, the wiring patterns having a default arrangement which has,relative to the corresponding tracks, a first amount of free space; andrefining the shell into a cell, the refining including selectivelyshrinking, in the first direction, one or more of the wiring patternsresulting in a second amount of free space, the second amount beinggreater than the first amount, increasing, in the first direction, oneor more chosen ones of the wiring patterns (chosen patterns), andbackfilling the free space with one or more at least one dummy patternor at least one wiring pattern.

FIG. 1 is a block diagram of a semiconductor device 100 in accordancewith at least one embodiment of the present disclosure.

Semiconductor device 100 includes, among other things, a circuit macro(hereinafter, macro) 102. In some embodiments, macro 102 is an SRAMmacro. In some embodiments, macro 102 is a macro other than an SRAMmacro. Macro 102 includes, among other things, one or more cell regions104. Each cell region 104 includes one or more protruding pins (P-Ps)and is referred to as a P-P cell region (P-P cell region) 104. In someembodiments, the one or more protruding pins are referred to asconvex-concave pins with cell region 104 accordingly referred to asconvex-concave pin region (C-C cell region) 104. Examples of layoutdiagrams having cells which result in P-P cell region 104 include thelayout diagrams disclosed herein.

FIG. 2A is a layout diagram 200A of instances of a defaultcell-template, in accordance with some embodiments.

Layout diagram 200A is refined progressively as layout diagrams200B-200F of corresponding FIGS. 2B-2F (discussed below).Correspondingly, cells 202A and 202B are refined progressively ascorresponding cells 202B-202F and 232B-232F of corresponding FIGS. 2B-2F(discussed below). In some embodiments, the function of one or both ofcells 202F and 232F of FIG. 2F is a corresponding Boolean logicfunction. In some embodiments, the function of one or both of cells 202Fand 232F of FIG. 2F is a corresponding storage function. An example of asemiconductor device having been fabricated based on a larger layoutdiagram which includes layout diagram 200F of FIG. 2F is semiconductordevice 100 of FIG. 1, where one or more of P-P cell regions 104corresponds to cell 202 and one or more of P-P cell regions 104corresponds to cell 232. Each of cells 202F and 232F (which representrefinements of corresponding cells 202A and 232A) represents acorresponding function of a semiconductor device having been fabricatedbased on a larger layout diagram which includes layout diagram 200F ofFIG. 2F. In some embodiments, the function is a Boolean logic function.In some embodiments, the function is a storage function.

Layout diagram 200A of FIG. 2A includes instantiations 202A and 232A of(hereinafter, cells 202A and 232A corresponding to) a defaultcell-template. Recalling that cells 202F and 232F are refinements ofcorresponding cells 202A and 232A, cells 202F and 232F are unfinishedcells which serve as starting points (or shells) for the refinementsresulting in corresponding cells 202F and 232F.

Cells 202A and 232A are arranged with respect to an imaginary grid whichincludes tracks T(i−4), . . . , T(i−1), T(i), T(i+1), . . . , T(i+5),where i is an integer and 0≤i, where each of the tracks extends in afirst direction. In some embodiments, the first direction is thehorizontal direction. In some embodiments, the first direction is theX-axis.

Cell 202A has a perimeter which includes a side boundary 204A on thetop, a side boundary 204B on the right, a side boundary 204C on thebottom and a side boundary 204D on the left. Cell 232A has a perimeterwhich includes a side boundary 234A on the top, a side boundary 234B onthe right, a side boundary 234C on the bottom and a side boundary 234Don the left. Side boundaries 204A and 234A at the corresponding tops andside boundaries 204C and 234C at the corresponding bottoms aresubstantially parallel to the first direction. Side boundaries 204B and234B on the corresponding right sides and side boundaries 204D and 234Don the corresponding left sides are substantially parallel to a seconddirection, where the second direction is substantially perpendicular tothe first direction. In some embodiments, where the first direction isthe horizontal direction, the second direction is the verticaldirection. In some embodiments, where the first direction is the X-axisdirection, the second direction is the Y-axis direction. Side boundary204B of cell 202A is substantially collinear with side boundary 234D ofcell 232A. As such, cell 202A abuts cell 232A in the horizontaldirection.

Cell 202A includes wiring patterns 206, 207, 208, 212 and 216 which arerectangular. Long axes of symmetry of wiring patterns 206, 207, 208, 212and 216 are substantially aligned with corresponding H-tracks T(i−2),T(i−1), T(i), T(i+1) and T(+2). Cell 232A of the default cell templateincludes wiring patterns 236, 237, 238, 242 and 246 which arerectangular. Long axes of symmetry of wiring patterns 236, 237, 238, 242and 246 are substantially aligned with corresponding H-tracks T(i−2),T(i−1), T(i), T(i+1) and T(+2).

It is assumed that the process node by which is fabricated asemiconductor device based on a larger layout diagram which includeslayout diagram 200F of FIG. 2F (where layout diagram 200F is arefinement of layout diagram 200A) uses double-patterning lithography.Accordingly, wiring patterns 206, 208, 216, 236, 238 and 246 are shownin the color red, whereas wiring patterns 207, 212, 237 and 242 areshown in the color green.

To the extent that some or all of each of wiring patterns 206, 207, 208,212, 216, 236, 237, 238, 242 and/or 246 (hereinafter, remaining wiringpatterns) are still present in layout diagram 200F, the remaining wiringpatterns correspond to conductors included in a first layer ofmetallization, M_1st, in a semiconductor device having been fabricatedbased on a larger layout diagram which includes layout diagram 200F ofFIG. 2F. In some embodiments, depending upon the numbering convention ofthe corresponding process node by which such a semiconductor device isfabricated, the first (1st) layer of metallization M_1st is eithermetallization layer zero, M0, or metallization layer one, M1. In FIGS.2A-2F, M_1st is assumed to be M0. In some embodiments, M0 is the firstlayer of metallization above a transistor layer (see FIG. 3A, discussedbelow) in which transistors are formed.

In some embodiments, cells 202A and 232A include correspondingtransistor layers (not shown). In some embodiments, the transistor layerof each of cells 202A and 232A includes corresponding sub-layers (notshown). The sub-layers include component patterns (not shown)corresponding to components, e.g., transistors, of a circuit that wouldresult from a larger layout diagram which includes layout diagram 200F(where layout diagram 200F is a refinement of layout diagram 200A aswell as layout diagrams 200B-200E (discussed below)).

In some embodiments, the transistor layer of each of cells 202A and/or232A is designated for CMOS configuration such that a semiconductordevice having been fabricated based on a layout diagram (which includescell 202A and/or 232A) would be a CMOS device. An example of a CMOSsemiconductor device having been fabricated based on layout diagram 200F(where layout diagram 200F is a refinement of layout diagram 200A) issemiconductor device 100 of FIG. 1, wherein P-P cell region 104A ofsemiconductor device 100 results from cell 202A or cell 232A. Wheredesignated for CMOS configuration, cell 202A is organized into a firstarea (not shown) designated for PMOS-configuration and a second area(not shown) designated for NMOS-configuration. Details regarding CMOSconfiguration and corresponding fabrication are found, e.g., in U.S.Pat. No. 8,786,019, granted Jul. 22, 2014, the entirety of each of whichis hereby incorporated by reference. In some embodiments, the transistorlayer of each of cells 202A and/or 232A is designated for PMOSconfiguration and not for CMOS configuration. In some embodiments, thetransistor layer of each of cells 202A and/or 232A is designated forNMOS configuration and not for CMOS configuration.

The default cell-template instantiated by each of cells 202A and 232Aassumes that each of wiring patterns 206, 207, 208, 212, 216, 236, 237,238, 242 and 246: does not extend beyond the perimeters of correspondingcells 202A and 232A; and has a maximum length in the horizontaldirection. A default first design rule for the process node associatedwith the default cell-template imposes a minimum gap (end-to-end gap)220 between ends of substantially co-track aligned wiring patterns. Insome embodiments, a corresponding second default design rule imposes aminimum boundary offset 221 between an end of a wiring pattern and aside boundary of a cell. In some embodiments, minimum boundary offset221 is substantially half of end-to-end gap 220.

In view of minimum boundary offset 221, cell 202A includes rectangularcut patterns 228A1-228A5 and 228B1-228B5, and cell 232A includes cutpatterns 229A1-229A5 and 229B1-229B5. In general, where a subjectpattern underlies a given cut pattern such that a portion of the subjectpattern is overlapped by the given cut pattern, the given cut pattern isused to indicate that the overlapped portion of the subject patterneventually will be removed during fabrication of a correspondingsemiconductor device. Cut patterns 228A1, 228A3, 228A5, 228B1, 228B3,228B5, 229A1, 229A3, 229A5, 229B1, 229B3 and 229B5 are shown in thecolor brown to indicate cut-significance with respect to correspondingred-colored wiring patterns 206, 208, 216, 236, 238 and 246. Cutpatterns 228A2, 228A4, 228B2, 228B4, 229A2, 229A4, 229B2 229B4 are shownin the color blue to indicate cut-significance with respect tocorresponding green-colored wiring patterns 207, 212, 237 and 242.

Cut patterns 228A1-228A5, 228B1-228B5, 229A1-229A5 and 229B1-229B5 arerectangular. For purposes of illustration, long axes of symmetry of cutpatterns 228A1-228A5 are roughly, though not substantially aligned withside boundary 204D of cell 202A, and long axes of symmetry of cutpatterns 228B1-228B5 are roughly, though not substantially aligned withside boundary 204B of cell 202A. Such rough alignment makes it easier todiscern each of cut patterns 228A1-228A5 and 228B1-228B5 in FIG. 2A.

In practice, long axes of symmetry of cut patterns 228A1-228A5 and228B1-228B5 would be substantially aligned with corresponding sideboundaries 204D and 204B of cell 202A. Similarly, for purposes ofillustration, long axes of symmetry of cut patterns 229A1-229A5 and229B1-229B5 are roughly, though not substantially aligned withcorresponding side boundaries 234D and 234B of cell 232A. In practice,long axes of symmetry of cut patterns 229A1-229A5 and 229B1-229B5 wouldbe substantially aligned with corresponding side boundaries 234D and234B of cell 232A. In some embodiments, cut patterns 228B1-228B5 arealigned over corresponding cut patterns 229A1-229A5. In someembodiments, cut patterns 229A1-229A5 are aligned over corresponding cutpatterns 228B1-229B5. In some embodiments, cut patterns 228B1-228B5 aremerged with corresponding cut patterns 229A1-229A5.

In FIG. 2A, wiring patterns which comprise M0 further include power grid(PG) patterns 250 and 252 which are rectangular and represent portionsof longer corresponding power grid lines of a semiconductor device whichhas been fabricated based on layout diagram 200F (where layout diagram200F is a refinement of layout diagram 200A). Accordingly, PG patterns250 and 252 are shown as extending outside of cells 202A and 232A in thehorizontal direction. which are rectangular. Long axes of symmetry of PGpatterns 250 and 252 are substantially parallel to the horizontaldirection. In some embodiments, PG pattern 250 is designated for a firstreference voltage and PG pattern 252 is designated for a secondreference voltage. In some embodiments, the first reference voltage isVDD and the second reference voltage is VSS.

Under the assumption of double-patterning lithography, PG patterns 250and 252 are shown in the color green-colored. Cut patterns 228A1, 228B1,229A1, 229B1, 228A5, 228B5, 229A5 and 229B5 overlie corresponding PGpatterns 250 and 252 but only have cut-significance with respect tocorresponding wiring patterns 206, 216, 236 and 246. PG patterns 250 and252 are not effected by cut patterns 228A1, 228B1, 229A1, 229B1, 228A5,228B5, 229A5 and 229B5.

FIG. 2B is a layout diagram 200B of a refinement of layout diagram 200A(FIG. 2A), in accordance with some embodiments.

Layout diagram 200B of FIG. 2B is similar to layout diagram 200A of FIG.2A. For brevity, the discussion of layout diagram 200B will focus ondifferences of layout diagram 200B with respect to layout diagram 200A.

Layout diagram 200B represents a refinement of layout diagram 200A inmultiple respects. In at least a first respect, e.g., layout diagram200B represents a refinement of layout diagram 200A, e.g., in terms ofidentifying which of cut patterns 228A1-228A5, 228B1-228B5, 229A1-229A5,229A1-229A5 and 229B1-229B5 should retained in order to achieve (atleast in part) the functions which corresponding cells 202F and 232Frepresent (where, again, cells 202F and 232F are correspondingrefinements of cells 202B and 232B).

As an example, in FIG. 2B, in order to achieve (at least in part) thefunctions which corresponding cells 202F and 232F represent, it isassumed that each of wiring patterns 206 and 236 should be an intra-cellwiring pattern. In some embodiments, intra-cell wiring patterns 206 and236 represent conductors in corresponding cell regions of asemiconductor device which has been fabricated based on a larger layoutdiagram which includes layout diagram 200F of FIG. 2F. In someembodiments, an intra-cell wiring pattern represents an intra-cellconductor in corresponding cell regions in a semiconductor device havingbeen fabricated based on a larger layout diagram which includes layoutdiagram 200F of FIG. 2F, wherein an intra-cell conductor carries asignal which is internal to the function of the corresponding cellregion. An intra-cell conductor is different than a pin. A pin is a typeof conductor which carries an input/output (I/O) signal of the functionof the corresponding cell region.

More particularly as to the example of FIG. 2B, in order to achieve (atleast in part) the functions which corresponding cells 202F and 232Frepresent (where, again, cells 202F and 232F are correspondingrefinements of cells 202B and 232B), it is further assumed that each ofintra-cell wiring patterns 206 and 236 should have a maximum length inthe horizontal direction in order to achieve (at least in part) thefunctions which corresponding cells 202F and 232F represent. In someembodiments, absent some reason to the contrary, for example, a routingconflict, intra-cell wiring patterns (e.g., as patterns 206 and 236)default to a maximum length in the horizontal direction so that asemiconductor device which has been fabricated based on thecorresponding layout diagram (e.g., layout diagram 200A) exhibitscorrespondingly increased structural density. Such a semiconductordevice can be planarized more quickly, e.g., because the increasedstructural density reduces irregularities in surface topography. In someembodiments, the maximum length (L_(MAX)) is substantially equal to thedifference between a width of the cell (L_(W)) and twice the minimumboundary offset (L_(OFF)) such that L_(MAX)≈L_(W)−2*L_(OFF).Accordingly, at this point in the refinement, it is clear that cutpatterns 228A1 and 228B1 should overlie corresponding ends of intra-cellwiring pattern 206, and cut patterns 229A1 and 229B1 should overliecorresponding ends of intra-cell wiring pattern 236. Cut patterns 228A1,228B1′, 229A1 and 229B1 are shown in brown to indicate cut-significancewith respect to corresponding red-colored wiring patterns 206 and 236.Cut patterns 228A1, 228B1, 229A1 and 229B1 overlie corresponding PGpatterns 250 and 252 and green-colored wiring patterns 207 and 237 butonly have cut-significance with respect to red-colored wiring patterns206 and 236. PG patterns 250 and 252 and green-colored wiring patterns207 and 237 are not effected by corresponding cut patterns 228A1, 228B1,229A1 and 229B1.

In at least a second respect, e.g., layout diagram 200B represents arefinement of layout diagram 200A, e.g., in terms of identifyingadditional cut patterns needed in order to achieve (at least in part)the functions which corresponding cells 202F and 232F represent (where,again, cells 202F and 232F are corresponding refinements of cells 202Band 232B). More particularly, in order to achieve (at least in part) thefunctions which corresponding cells 202F and 232F represent, as anexample, it is assumed that each of wiring patterns 216 and 246 shouldbe split substantially in half into corresponding wiring patterns 216A,216B, 246A and 246B in order to achieve (at least in part) the functionswhich corresponding cells 202F and 232F represent. In some embodiments,wiring patterns 216 and 246 are divided into corresponding portionsother than halves. Accordingly, at this point in the refinement, it isclear that cut patterns 228C and 229C should be added to correspondingcells 202B and 232B.

Cut patterns 228C and 229C are shown in brown to indicatecut-significance with respect to corresponding red-colored wiringpatterns 216 and 246. Cut patterns 228C and 229C overlie PG pattern 252and green-colored wiring patterns 212 and 242 but only havecut-significance with respect to red-colored wiring patterns, e.g., 216and 246. PG pattern 252 and green-colored wiring patterns 212 and 242are not effected by corresponding cut patterns 228C and 229C.

In at least a third respect, e.g., layout diagram 200B represents arefinement of layout diagram 200A, e.g., in terms of removing portionsof cut patterns 228A2-228A5, 228B2-228B5, 229A2-229A5 and 229B2-229B5 ofFIG. 2A which may not be needed in order to achieve (at least in part)the functions which corresponding cells 202F and 232F represent (where,again, cells 202F and 232F are corresponding refinements of cells 202Band 232B). At this point in the refinement, it is not clear how much, ifany, of wiring patterns 207, 208, 212, 237, 238 and 242 should retained.Accordingly, at this point in the refinement, cut patterns 228A2-228A5and 228B2-228B5 which overlie ends of corresponding wiring patterns 207,208 and 212 have been removed, and portions of patterns 229A2-229A5 and229B2-229B5 which overlie ends of corresponding wiring patterns 237, 238and 242 have been removed.

FIG. 2C is a layout diagram 200C of a refinement of layout diagram 200B(FIG. 2B), in accordance with some embodiments.

Layout diagram 200C of FIG. 2C is similar to layout diagram 200B of FIG.2B. For brevity, the discussion of layout diagram 200C will focus ondifferences of layout diagram 200C with respect to layout diagram 200B.

Layout diagram 200C represents a refinement of layout diagram 200B inmultiple respects. In at least a first respect, e.g., layout diagram200C represents a refinement of layout diagram 200B, e.g., in terms ofhaving determined which of wiring patterns 207, 208, 212, 236, 238 and242 of corresponding cells 202B and 232B may possibly be removed withoutimpairing an ability to achieve (at least in part) the functions whichcorresponding cells 202F and 232F represent (where cells 202F and 232Fare corresponding refinements of cells 202C and 232C). Continuing theexample of FIG. 2B into FIG. 2C, it is determined that wiring patterns207 and 237 are not necessary in order to achieve (at least in part) thefunctions which corresponding cells 202F and 232F represent.Accordingly, layout diagram 200C shows no wiring patterns aligned withtrack T(i−1) in reflection of wiring patterns 207 and 237 having beenremoved.

Regarding FIG. 2C, in at least a second respect, e.g., layout diagram200C represents a refinement of layout diagram 200B, e.g., in terms ofhaving determined which portions of corresponding wiring patterns 208,212, 216A, 216B, 238, 242, 246A and 246B may be removed withoutimpairing an ability to achieve (at least in part) the functions whichcorresponding cells 202F and 232F represent (where cells 202F and 232Fare corresponding refinements of cells 202C and 232C). Furthercontinuing the example of FIG. 2B into FIG. 2C, it is determined thatportions of corresponding wiring patterns 208, 212, 216A, 216B, 238,242, 246A and 246B may be removed without impairing an ability toachieve (at least in part) the functions which corresponding cells 202Fand 232F represent, resulting in shortened (in the horizontal direction)corresponding wiring patterns 208′, 212′, 216A′, 216B′, 238′, 242′,246A′ and 246B′ and corresponding gaps 209, 213A, 213B, 217A, 217B, 239,243 and 247. At this point in the refinement, it is not clear whetherany of wiring patterns 208′, 212′, 216A′, 216B′, 238′, 242′, 246A′ and246B′ subsequently will be extended in the horizontal direction.Accordingly, and with the exceptions of the ends of wiring patternsresulting from corresponding cut patterns 228C and 229C (discussedabove), cut patterns or dummy patterns (the latter discussed below) arenot shown at corresponding ends of wiring patterns 208′, 212′, 216A′,216B′, 238′, 242′, 246A′ and 246B′.

FIG. 2D is a layout diagram 200D of a refinement of layout diagram 200C(FIG. 2C), in accordance with some embodiments.

Layout diagram 200D of FIG. 2D is similar to layout diagram 200C of FIG.2C. For brevity, the discussion of layout diagram 200D will focus ondifferences of layout diagram 200D with respect to layout diagram 200C.

Layout diagram 200D represents a refinement of layout diagram 200C in atleast a first respect, e.g., in terms of having determined which ofwiring patterns 208′, 212′, 216A′, 216B′, 238′, 242′, 246A′ and 246B′are to be selectively extended across a corresponding cell side boundaryin order to achieve (at least in part) the functions which correspondingcells 202F and 232F represent (where cells 202F and 232F arecorresponding refinements of cells 202D and 232D). Continuing theexample of FIG. 2C into FIG. 2D, it is determined: that wiring pattern208′ can be extended to cross side boundary 204B, resulting in wiringpattern 208″ (see FIG. 2E) which projects outside the perimeter of cell202D into cell 232D; and that wiring pattern 246A′ can be extended so asto cross side boundary 234D, resulting in wiring pattern 246A″ (see FIG.2E) which projects outside the perimeter of cell 232D into cell 202D. Insome embodiments, a placement and routing (P & R) tool, e.g., software,is used to determine that wiring patterns can be extended to crossboundaries, e.g., that wiring pattern 208′ can be extended to cross sideboundary 204B and wiring pattern 246A′ can be extended so as to crossside boundary 234D.

More particularly, further continuing the example of FIG. 2C into FIG.2D, each of wiring patterns 208′ and 246A′ is a pin pattern whichrepresents a pin in a corresponding cell region a semiconductor devicehaving been fabricated based on a larger layout diagram which includeslayout diagram 200F of FIG. 2F, wherein a pin (again) is a type ofconductor which carries an input/output (I/O) signal of the function ofthe corresponding cell region. A pin is different than an intra-cellconductor, as explained above. In some embodiments, wiring pattern 208′and/or wiring pattern 246A′ is a trans-boundary intra-cell wiringpattern which extends across a side boundary of a cell.

In some embodiments, the determination to extend wiring pattern 208′(hereinafter pin pattern 208′) into 232D takes into consideration whichconductor patterns in an immediately overlying layer of metallizationare available for connection to pin pattern 208′. Further continuing theexample of FIG. 2C into FIG. 2D, recalling that pin pattern 208′ isincluded in layer M0 of metallization, the immediately overlying layeris layer M1 of metallization. Accordingly, FIG. 2D shows wiring patterns260A-260S as being included in layer M1. Wiring patterns 260A-260S arerectangular. Long axes of symmetry of wiring patterns 260A-260S aresubstantially aligned with corresponding V-tracks (not shown), where theV-tracks extend in the vertical direction. It is assumed that theprocess node by which is fabricated a semiconductor device based on alarger layout diagram which includes layout diagram 200F of FIG. 2F(where layout diagram 200F is a refinement of layout diagram 200A) usesdouble-patterning lithography. Accordingly, wiring patterns 260A, 260C,260E, 260G, 260I, 260K, 260M, 2600, 260Q and 260S are shown in the colorpink, whereas wiring patterns 260B, 260D, 260F, 260H, 260J, 260L, 260N,260P and 260R are shown in the color aqua.

In FIG. 2C, it was determined that a portion of pin pattern 208′extending from side boundary 204D towards side boundary 204B, and endingpartially underneath wiring 260F should be removed. Accordingly, in FIG.2D, it is determined if, and to what extent, pin pattern 208′ could beextended in the horizontal direction towards and beyond side boundary204B of cell 202D. In FIG. 2D, it is assumed that wiring patterns260F-260L overlap pin pattern 208′, as well as gap 239 in the horizontaldirection between pin pattern 208′ of cell 202D and wiring pattern 238′of cell 232D. If one or more of wiring patterns 260F-260L is available,a connection to pin pattern 208′ could be made, and if so then would beindicated with a via pattern (not shown). Such a via pattern wouldrepresent a via (an electrically conductive structure) in aninterconnect layer (not shown) between layers M0 and M 1.

Further continuing the example of FIG. 2C into FIG. 2D, relative to thehorizontal direction, pin pattern 208′ is only partially overlapped bywiring pattern 260F. In some embodiments, full overlap (relative to thehorizontal direction) by a given wiring pattern in the M1 layer(hereinafter, the given M1 pattern) over a corresponding given wiringpattern in the M0 layer (hereinafter, the given M0 pattern), plusextension (relative to the horizontal direction) of the given M0 patterna predetermined distance beyond each of first and second sides of thegiven M1 pattern, is regarded as a sufficient amount of overlap forpurposes of making a via-based connection between the given M0 patternand the corresponding given M1 pattern. Accordingly, here, it isdetermined that the overlap of pin pattern 208′ by wiring pattern 260Fis insufficient for interposing a via pattern therebetween, as indicatedby a corresponding circle-backslash symbol 264A. Because of the firstdesign rule which provides minimum end-to-end gap 220, it is alsorecognized that wiring pattern 208′ could not be extended sufficientlyfar into cell 232D so as to provide a sufficient underlap of wiringpattern 260M, purposes of making a via-based connection therebetween, asindicated by a corresponding circle-backslash symbol 264H. It is alsoassumed that each of wiring patterns 260G, 260H, 260I and 260J has arouting conflict and so is not available for connection to pin pattern208′, as indicated by corresponding circle-backslash symbols 264B, 264C,264D and 264F.

Yet further continuing the example of FIG. 2C into FIG. 2D, it is yetfurther assumed that neither of wiring patterns 260J nor 260L has arouting conflict and so each is available for connection to pin pattern208′, as indicated by corresponding check marks 264E and 264G.Connecting pin pattern 208′ to wiring pattern 260L would necessitateextending pin pattern 208′ further into cell 232D than if pin pattern208′ were to be connected to wiring pattern 260J. In general, shorterwiring pattern lengths are better in terms length-cumulative resistance,signal propagation delay, or the like. Accordingly, in layout diagram200D, it is assumed that pin pattern 208′ is extended to connect towiring pattern 260J. In some embodiments, pin pattern 208′ is extendedto connect to wiring pattern 260L.

Similarly, in FIG. 2D, regarding pin pattern 246A′, relative to thehorizontal direction, and yet further continuing the example of FIG. 2Cinto FIG. 2D, it is also assumed that wiring patterns 260I-260N overlappin pattern 246A′, as well as gap 217B in the horizontal directionbetween pin pattern 246A′ of cell 232D and wiring pattern 216B′ of cell202D. Because of the first design rule which provides minimum end-to-endgap 220, it is recognized that wiring pattern 246A′ could not beextended sufficiently far into cell 202D so as to provide a sufficientunderlap of wiring pattern 260I for purposes of making a via-basedconnection therebetween, as indicated by a correspondingcircle-backslash symbol 266A. Similarly, it is also recognized thatwiring pattern 246A′ could not be extended sufficiently far towards sideboundary 234B of cell 232D so as to provide a sufficient underlap ofwiring pattern 260N for purposes of making a via-based connectiontherebetween, as indicated by a corresponding circle-backslash symbol266F. Yet further continuing the example of FIG. 2C into FIG. 2D, it isalso assumed that each of wiring patterns 260K, 260L and 260M has arouting conflict and so is not available for connection to pin pattern246A′, as indicated by corresponding circle-backslash symbols 266C, 266Dand 266E. It is yet further assumed that wiring pattern 260J does nothave a routing conflict and so is available for connection to pinpattern 246A′, as indicated by a corresponding check mark 266B.

For simplicity of illustration, it has been assumed that wiring pattern260J does not have a routing conflict with respect to making a via-basedconnection to each of pin pattern 208′ and pin pattern 246A′. In someembodiments, the functions which corresponding cells 202F and 232Frepresent (where, again, cells 202F and 232F are correspondingrefinements of cells 202B and 232B) can be achieved (at least in part)by electrically connecting pin pattern 208′ to pin pattern 246A′ usingcorresponding via-based connections to wiring pattern 260J (see FIG. 2F,discussed below). In some embodiments, in order to achieve (at least inpart) the functions which corresponding cells 202F and 232F represent,pin pattern 208′ should not be connected electrically to pin pattern246A′ through wiring pattern 260J as well as corresponding via-basedconnections therebetween; accordingly, in such embodiments, a cutpattern (not shown) which is specific to pink-colored wiring patterns260A, 260C, 260E, 260G, 260I, 260K, 260M, 2600, 260Q and 260S, islocated over the intersection of aqua-colored wiring pattern 260J andtrack T(i+2). In some embodiments, wiring pattern 260J will have arouting conflict with respect to making a via-based connection to pinpattern 208′ but not with respect to pin pattern 246A′ whereas one ormore of wiring patterns 260G, 260H, 260I and 260J will not have arouting conflict with respect to making a via-based connection to pinpattern 208′. In some embodiments, wiring pattern 260J will have arouting conflict with respect to making a via-based connection to pinpattern 246A′ but not with respect to pin pattern 208′ whereas one ormore of wiring patterns 260K, 260L and 260M will not have a routingconflict with respect to making a via-based connection to pin pattern246A′.

FIG. 2E is a layout diagram 200E showing a refinement of layout diagram200D (FIG. 2D), in accordance with some embodiments.

Layout diagram 200E of FIG. 2E is similar to layout diagram 200D of FIG.2D. For brevity, the discussion of layout diagram 200E will focus ondifferences of layout diagram 200E with respect to layout diagram 200D.

Layout diagram 200E represents a refinement of layout diagram 200D inmultiple respects. Layout diagram 200E represents a refinement of layoutdiagram 200D in at least a first respect, e.g., in terms of showing theresults of the determination described above in the context of layoutdiagram 200D of FIG. 2D. Continuing the example of FIG. 2D into FIG. 2E,pin pattern 208′ of FIG. 2D has be extended to cross side boundary 234Dof cell 232E, resulting in wiring pattern 208″; and pin pattern 246A′ ofFIG. 2D has been extended to cross side boundary 204B of cell 202E. Aportion 208P of pin pattern 208″ extends into cell 232E such that pinpattern 208″ can be described as a protruding pin (p-pin) pattern 208″and cell 202E can be further described as protruding pin (P-P) cell202E. A portion 246AP of pin pattern 246A″ extends into cell 202E suchthat pin pattern 246A″ can be described as a protruding pin (p-pin)pattern 246A″ and cell 232E can be further described as P-P cell 232E. Asemiconductor device fabricated based on a larger layout diagram whichincludes layout diagram such as layout diagram 200F of FIG. 2F wouldinclude first and second P-P cell regions 104 corresponding to P-P cell202E and P-P cell 232E. P-pin pattern 208″ projects outside theperimeter of cell 202E into cell 232E, resulting in a smaller gap 239′between p-pin pattern 208″ and wiring pattern 238′. P-pin pattern 246A″projects outside the perimeter of cell 232E into cell 202E, resulting ina smaller gap 217B′ between wiring pattern 216B′ and p-pin pattern246A″.

Layout diagram 200E represents a refinement of layout diagram 200D in atleast a second respect, e.g., in terms of showing via patterns 224 and244 which indicate electrical connections between wiring pattern 260J oflayer M1 (not shown in FIG. 2E but see FIG. 2D) and corresponding p-pinpatterns 208″ and 246A″ of layer M0. Via patterns 224 and 244 wouldrepresent a via (a conductive structure) in an interconnect layer (notshown) between layers M0 and M 1. A semiconductor device fabricatedbased on a larger layout diagram which includes layout diagram such aslayout diagram 200E of FIG. 2E would include first and second viascorresponding to via patterns 224 and 244.

In at least a third respect, layout diagram 200E represents a refinementof layout diagram 200D, e.g., in terms of having added a wiring pattern248 which is rectangular and is referred to as a feedthrough pattern. Along axis of feedthrough pattern 248 is substantially aligned withH-track T(i−1). Feedthrough pattern 248 corresponds to a feedthroughconductor in layer M0 of a semiconductor device which has beenfabricated based on a larger layout diagram which includes layoutdiagram 200F of FIG. 2F (where layout diagram 200F is a refinement oflayout diagram 200E). A feedthrough conductor extends (in the horizontaldirection) across the entirety of at least one cell region (hereinafter,at least one spanned cell region) in order to connect first and secondcell regions on opposite sides (relative to the horizontal direction) ofthe at least one spanned cell region.

A portion 249A of feedthrough pattern 248 is internal to, and spans (inthe horizontal direction) an entirety of, P-P cell 202F. A portion 249Bof feedthrough pattern 248 is internal to, and spans (in the horizontaldirection) an entirety of, P-P cell 232F. In some embodiments, regardingP-P cell 202F, a first end of feedthrough pattern 248 extends (in thehorizontal direction) away from side boundary 204B and exterior to sideboundary 204D, and into a first extra cell (not shown) which abuts P-Pcell 202F at side boundary 204D. In such embodiments, regarding P-P cell232F, a second end of feedthrough pattern 248 extends (in the horizontaldirection) away from side boundary 234D and exterior to side boundary234B, and into a second extra cell (not shown) which abuts P-P cell 232Fat side boundary 234B. Accordingly, in such embodiments, feedthroughpattern 248 is used to connect the first extra cell (not shown) and thesecond extra cell (not shown).

FIG. 2F is a layout diagram 200F of a refinement of layout diagram 200E(FIG. 2E), in accordance with some embodiments.

Layout diagram 200F of FIG. 2F is similar to layout diagram 200E of FIG.2E. For brevity, the discussion of layout diagram 200F will focus ondifferences of layout diagram 200F with respect to layout diagram 200E.

Layout diagram 200F represents a refinement of layout diagram 200E inmultiple respects. In at least a first respect, layout diagram 200Frepresents a refinement of layout diagram 200E, e.g., in terms of notshowing wiring patterns 260A-260S of layer M1. Wiring patterns 260A-260Sare not shown in FIG. 2F for simplicity of illustration.

In at least a second respect, layout diagram 200F represents arefinement of layout diagram 200E, e.g., in terms of having added dummypatterns in layout diagram 200F relative to layout diagram 200E.Continuing the example of FIG. 2E into FIG. 2F, dummy patterns 209′,213A′, 213B′ and 217A′ have been added to P-P cell 202F and dummypatterns 239′, 243′ and 247′ have been added to P-P cell 232F. Dummypatterns 209′, 213A′, 213B′ and 217A′ fill corresponding gaps 209, 213A,213B and 217A of FIG. 2E. Dummy patterns 239′, 243′ and 247′ fillcorresponding gaps 239, 243 and 247 of FIG. 2E. Each of dummy patterns209′, 213A′, 213B′ and 217A′, as well as 239′, 243′ and 247′, representsa dummy structure in a corresponding P-P cell region of a semiconductordevice which has been fabricated based on a larger layout diagram whichincludes layout diagram 200F of FIG. 2F.

In some embodiments, a dummy structure has the shape and orientation ofa structure which otherwise would appear to be a conductor but which isnot electrically conductive. In some embodiments, a conductor-shapedstructure includes a conductor portion which is electrically conductiveand a dummy portion which is not electrically conductive. In someembodiments, during fabrication, initially the conductor-shapedstructure is not-electrically conductive, and then the conductor portionof the conductor-shaped structure is rendered electrically conductive bya corresponding doping process whereas the dummy portion is masked andremains undoped. In general, replacing empty space along conductortracks with corresponding dummy patterns results in a dummy-paddedlayout diagram that exhibits improved pattern density. A semiconductordevice which has been fabricated based on a dummy-padded layout diagram,e.g., layout diagram 200F of FIG. 2F, exhibits correspondingly increasedstructural density. Such a semiconductor device can be planarized morequickly, e.g., because the increased structural density reducesirregularities in surface topography.

In some embodiments, continuing the example of FIG. 2E into FIG. 2Falbeit as an alternative to feedthrough pattern 248, dummy pattern 207′(not shown) is also added to P-P cell 202F and dummy pattern 237′ alsois added to P-P cell 232F. In effect, dummy patterns 207′ (not shown)and 237′ take the place of wiring patterns 207 and 237 of FIG. 2B(wherein wiring patterns 207 and 237 had been removed in the refinementof FIG. 2C with respect to FIG. 2B). Each of dummy patterns 207′ and237′ represents a dummy structure in a corresponding P-P cell region ofa semiconductor device which has been fabricated based on a largerlayout diagram which includes layout diagram 200F of FIG. 2F.

Layout diagram 200F represents a refinement of layout diagram 200E in atleast a third respect, e.g., in terms of having restored some of thepreviously-removed cut patterns in layout diagram 200F relative tolayout diagram 200E. Continuing the example of FIG. 2E into FIG. 2F, cutpatterns 228A2-228A5, 228B2, 228B4, 229A2, 229A4 and 229B2-229B5 havebeen restored in FIG. 2F.

More particularly, in FIG. 2F, cut patterns 228A3-228A5 have beenrestored in order to impose minimum boundary offset 221 between sideboundary 204D of P-P cell 202F and corresponding ends of dummy patterns207′, 209′, 213A′ and 217A′. Cut patterns 228A3-228A5 also imposeminimum end-to-end gap 220 between ends of dummy patterns 207′, 209′,213A′ and 217A′ and ends of corresponding co-track aligned wiringpatterns (not shown) in a P-P cell (not shown) which abuts side boundary204D of P-P cell 202F. Cut pattern 228B4 has been restored in order toimpose minimum boundary offset 221 between side boundary 204B of P-Pcell 202F and the corresponding end of dummy pattern 213B′. Cut pattern228B4 also imposes minimum end-to-end gap 220 between corresponding endsof dummy pattern 213B′ and co-track aligned wiring pattern 242′. Cutpattern 229A4 has been restored in order to impose minimum boundaryoffset 221 between side boundary 234D of P-P cell 232F and thecorresponding end of wiring pattern 242′. Cut pattern 229A4 also imposesminimum end-to-end gap 220 between corresponding ends of wiring pattern242′ and co-track aligned dummy pattern 213B′. Cut patterns 229B3-229B5have been restored in order to impose minimum boundary offset 221between side boundary 234B and corresponding ends of wiring pattern 238′and dummy patterns 243′ and 247′. Cut patterns 229B3-229B5 also imposeminimum end-to-end gap 220 between ends of wiring pattern 238′ and dummypatterns 243′ and 247′ and corresponding ends of co-track aligned wiringpatterns (not shown) in a P-P cell (not shown) which abuts side boundary234B of P-P cell 232F.

Regarding layout diagram 200F, in some embodiments, for a given pair ofgiven first and second cut patterns which are immediately adjacent toeach other (in the horizontal direction), there is a third design rulethat the first and second given cut patterns in the given pair are to beseparated by at least a minimum cut spacing (in the horizontaldirection). If a contemplated location for a first contemplated cutpattern does not exhibit the minimum cut spacing with respect to asecond contemplated cut pattern, then the first contemplated cut patterncannot be located in the contemplated location unless the contemplatedsecond cut pattern were to be appropriately relocated (assuming thatsuch relocation was itself permissible).

In FIG. 2F, it is assumed that all cut patterns satisfy the minimum cutspacing. In particular, the following is assumed: cut pattern 228Dsatisfies the minimum cut spacing with respect to each of correspondingcut patterns 228A5; cut pattern 228D satisfies the minimum cut spacingwith respect to each of corresponding cut patterns 228C and 229C; cutpattern 229D satisfies the minimum cut spacing with respect to cutpattern 229B3; and cut pattern 229C satisfies the minimum cut spacingwith respect to each of corresponding cut patterns 228D and 229B5.

In some embodiments, continuing the example of FIG. 2E into FIG. 2Falbeit in the context of the alternative to feedthrough pattern 248, cutpatterns 228A2 (not shown), 228B2 (not shown), 229A2 (not shown) and229B2 (not shown) have been restored. More particularly, cut pattern228A2 (not shown) has been restored in order to impose minimum boundaryoffset 221 between side boundary 204D of P-P cell 202F and thecorresponding end of dummy pattern 207′. Cut pattern 228A2 also imposesminimum end-to-end gap 220 between corresponding ends of dummy pattern207′ and co-track aligned wiring pattern (not shown) in a P-P cell (notshown) which abuts side boundary 204D of P-P cell 202F. Cut patterns228B2 has been restored in order to impose minimum boundary offset 221between side boundary 204B of P-P cell 202F and the corresponding end ofdummy pattern 207′. Cut pattern 228B2 also imposes minimum end-to-endgap 220 between the ends of dummy pattern 207′ and co-track aligneddummy pattern 237′. Cut pattern 229A2 has been restored in order toimpose minimum boundary offset 221 between side boundary 234D of P-Pcell 232F and the corresponding end of dummy pattern 237′. Cut patterns229A2 also imposes minimum end-to-end gap 220 between corresponding endsof dummy patterns 237′ and co-track aligned dummy pattern 207′. Cutpattern 229B2 has been restored in order to impose minimum boundaryoffset 221 between side boundary 234B and the corresponding end of dummypattern 237′. Cut pattern 229B2 also imposes minimum end-to-end gap 220between corresponding ends of dummy pattern 237′ and co-track alignedwiring pattern (not shown) in a P-P cell (not shown) which abuts sideboundary 234B of P-P cell 232F.

Layout diagram 200F represents a refinement of layout diagram 200E in atleast a fourth respect, e.g., in terms of having added new cut patternsin layout diagram 200F relative to layout diagram 200E. Continuing theexample of FIG. 2E into FIG. 2F, cut patterns 228D and 229D have beenadded to corresponding P-P cells 202F and 232F. More particularly, cutpattern 228D has been added to impose minimum end-to-end gap 220 betweencorresponding ends of wiring pattern 216B′ of P-P cell 202F and pinpattern 246″ of P-P cell 232F. Cut pattern 229D has been added to imposeminimum end-to-end gap 220 between corresponding ends of p-pin pattern208″ of P-P cell 202F and dummy pattern 239′ of P-P cell 232F.

Regarding FIG. 2F, for a P-P cell region (e.g., P-P cell region 104)included in a semiconductor device (e.g., semiconductor device 100 ofFIG. 1) which has been fabricated based on a larger layout diagram whichincludes layout diagram 200F, components (e.g., 313B′ 308″ and 306corresponding in cell 202F to dummy pattern 213B′, p-pin pattern 208″and intra-cell wiring pattern 206, as well as components (not shown)corresponding in cell 202F to intra-cell wiring patterns 212′ and 216A′and dummy patterns 209′, 213A′, and 217A′) have an arrangement (notshown). The arrangement is such that a virtual perimeter is drawablearound substantially all of the components. Such a virtual perimeter isrectangular and includes a first virtual side boundary (e.g., sideboundary 204B) and a second virtual side boundary (e.g., side boundary204D) which are substantially parallel and extend in a first direction.The components of such a P-P cell region include a first conductor(e.g., pin 308″ corresponding to p-pin pattern 208″) which extends inthe first direction. A portion (e.g., e.g. corresponding to portion 208Pof p-pin pattern 208″) of the first conductor has a first end whichextends exterior to the first virtual side boundary by a protrusionlength which is substantially greater than a minimum virtual boundaryoffset (e.g., corresponding to minimum boundary offset 221).

In some embodiments, semiconductor devices fabricated based oncorresponding larger layout diagrams which include a layout diagram suchas layout diagram 200F of FIG. 2F, and thus include P-P cells such asP-P cell 202F and/or 232F, beneficially exhibit approximately 20%improvement in pin accessibility. In some embodiments, semiconductordevices fabricated based on corresponding larger layout diagrams whichinclude a layout diagram such as layout diagram 200F of FIG. 2F, andthus include P-P cells such as P-P cell 202F and/or 232F, beneficiallyexhibit approximately 5% improvement in utilization, e.g., approximately5% improvement in terms of power-performance-area (PPA).

Together, an effect of the refinements reflected in layout diagrams200A-200C of corresponding FIGS. 2A-2C can be described as havingstarted with shells and then having expanded the free space on H-tracksof layer M0 by removing, in whole or partially, portions of one or morecorresponding wiring patterns in layer M0. An effect of the refinementsreflected in layout diagrams 200D-200E of corresponding FIGS. 2D-2E canbe described as routing in general, and more particularly as routing inorder to establish connections to corresponding wiring patterns in layerM1. An effect of the refinements reflected in layout diagram 200F ofcorresponding FIG. 2F can be described as backfilling with dummypatterns. Overall, a method manifested in the refinements reflected inlayout diagrams 200A-200F of corresponding FIGS. 2A-2F can be describedas M0 post-routing dummy-backfilling.

FIG. 3A is a cross-section of a P-P cell region 302A of a semiconductordevice, in accordance with some embodiments.

P-P cell region 302A is an example of a cell region of a semiconductordevice which is fabricated based on a larger layout diagram whichincludes a smaller layout diagram such as the layout diagrams disclosedherein, e.g., layout diagram 200E of FIG. 2E. As such, P-P cell region302A is an example of cell region 104 of semiconductor device 100 ofFIG. 1.

P-P cell region 302A includes layers 361, 365 and 367. Layer 365 isformed on layer 361. Layer 367 is formed on layer 365. Layer 361represents a transistor layer in which transistors are formed. In someembodiments, layer 361 includes corresponding sub-layers (not shown).The sub-layers include component patterns (not shown) corresponding tocomponents, e.g., transistors, of a circuit that would result from alarger layout diagram which includes a smaller layout diagram, e.g.,layout diagram 200E of FIG. 2E (where layout diagram 200E is arefinement of layout diagrams 200A-200D).

In FIG. 3A, layer 365 represents a first layer of metallization, M_1st,in a semiconductor device having been fabricated based on a largerlayout diagram which includes a smaller layout diagram, e.g., layoutdiagram 200E of FIG. 2E. In some embodiments, depending upon thenumbering convention of the corresponding process node by which such asemiconductor device is fabricated, the first (1st) layer ofmetallization M_1st is either metallization layer zero, M0, ormetallization layer one, M1. Consistent with FIGS. 2A-2F, in FIG. 3A,M_1st is assumed to be M0 such that layer 365 represents layer M0 ofmetallization. Layer 367 represents an interconnect layer insertedbetween layers 365 and layer M1 of metallization (not shown in FIG. 3A).

Layer 365 of FIG. 3A includes conductors 352, 346A″, 308″ and 350, andan interlayer dielectric (ILD) 364. Conductors 352, 346A″, 308″ and 350correspond to PG pattern 252, p-pin pattern 246A″, p-pin pattern 208″and PG pattern 250 in layout diagram 200E of FIG. 2E. Layer 367 includesvias 344 and 324, and an interlayer dielectric (ILD) 366. Each of vias344 and 324 is an electrically conductive structure. Vias 344 and 324correspond to via patterns 244 and 224 in layout diagram 200E of FIG.2E. Vias 344 and 324 are substantially centered over correspondingconductors 346A″ and 308″ so as to electrically connect conductors 346A″and 308″ to corresponding conductors (not shown) in layer M1 (again, notshown in FIG. 3A).

FIG. 3B is a cross-section of a P-P cell region 302B of a semiconductordevice, in accordance with some embodiments.

The cross-section of P-P cell region 302B of FIG. 3B is similar to thecross-section of cell region 302A of FIG. 3A. For brevity, thediscussion of FIG. 3B will focus on differences of FIG. 3B with respectto FIG. 3A.

P-P cell region 302B is an example of a cell region of a semiconductordevice which is fabricated based on a larger layout diagram whichincludes a smaller layout diagram such as the layout diagrams disclosedherein, e.g., layout diagram 200F of FIG. 2F. As such, P-P cell region302B is an example of cell region 104 of semiconductor device 100 ofFIG. 1.

In FIG. 3B, relative to layer 365 of FIG. 3A, dummy structure 313B′,conductor 348 and conductor 306 have been added resulting in layer 365′.Dummy structure 313B′ corresponds to dummy pattern 213B′ in layoutdiagram 200F of FIG. 2F. Conductor 348 corresponds to feedthroughpattern 248 in layout diagram 200F of FIG. 2F. Conductor 306 correspondsto intra-cell wiring pattern 206 in layout diagram 200F of FIG. 2F.

FIG. 4 is a layout diagram 400, in accordance with some embodiments.

Layout diagram 400 represents a portion of a larger layout diagram. Anexample of a semiconductor device having been fabricated based on alarger layout diagram which includes layout diagram 400 of FIG. 4 issemiconductor device 100 of FIG. 1, where an example of a P-P cellregion 104 corresponds to cell 404.

In FIG. 4, layout diagram 400 includes cells 402, 404 and 406. Each ofcells 402, 404 and 406 represents a corresponding function of asemiconductor device having been fabricated based on a larger layoutdiagram which includes layout diagram 400 of FIG. 4. In someembodiments, the function of one or more of cells 402, 404 and 406 is acorresponding Boolean logic function. In some embodiments, the functionof one or more of cells 402, 404 and 406 is a corresponding storagefunction.

In layout diagram 400, each of cells 402, 404 and 406 is rectangular.Relative to a first direction, which is the horizontal direction in FIG.4, cells 402 and 404 are abutting and cells 404 and 406 are abutting. Insome embodiments, the first direction is a direction other than thehorizontal direction. Each of cells 402, 404 and 406 includes variousfirst type wiring patterns and various second type wiring patterns. Longaxes of the various first type wiring patterns are substantiallyparallel to the horizontal direction. Long axes of the various secondtype wiring patterns are substantially parallel to the verticaldirection. In some embodiments, the first direction is a direction otherthan the horizontal direction and the second direction is substantiallyperpendicular to the first direction.

In FIG. 4, the various first type wiring patterns representcorresponding conductors included in a first layer of metallization,M_1st, for a semiconductor device having been fabricated based on alarger layout diagram which includes a smaller layout diagram, e.g.,layout diagram 400. In some embodiments, depending upon the numberingconvention of the corresponding process node by which such asemiconductor device is fabricated, the first (1st) layer ofmetallization M_1st is either metallization layer zero, M0, ormetallization layer one, M 1. Consistent with FIGS. 2A-2F and 3A-3B, inFIG. 4, M_1st is assumed to be M0 such that the first type wiringpatterns represent conductors in layer M0 of metallization and thesecond type wiring patterns represent wiring conductors in layer M1 ofmetallization.

In FIG. 4, the first type wiring patterns include wiring patterns 408and 412. In particular, wiring pattern 408 is included in cell 404.Wiring pattern 408 is an example of a p-pin pattern, and accordinglycell 404 is an example of a P-P cell. Relative to the horizontaldirection, a portion 410 of p-pin pattern 408 extends external to P-Pcell 404 into cell 402. Wiring pattern 412 is an example of afeedthrough pattern. Feedthrough pattern 412 extends across the entiretyof P-P cell 404. Relative to the horizontal direction: a first portion416 of feedthrough pattern 412 extends beyond P-P cell 404 into cell402; and a second portion 418 of feedthrough pattern 412 extends beyondcell P-P 404 into cell 406.

In some embodiments, P-P cell 404 is an example result of an embodimentof an M0 post-routing dummy-backfilling method (described above, butalso see FIGS. 6-7. In some embodiments, the inclusion of feedthroughpattern 412 is an example result of an embodiment of an M0 post-routingdummy-backfilling method (described above, but also see FIGS. 6-7).

FIG. 5 is a flowchart of a method 500 of generating a layout diagram, inaccordance with some embodiments.

Method 500 is implementable, for example, using EDA system 800 (FIG. 8,discussed below), in accordance with some embodiments. Regarding method500, an example of the layout diagram is layout diagram 200F of FIG. 2F.

Method 500 includes blocks 502-508. At block 502, a cell is generatedwhich represents a circuit. The cell includes a first and second wiringpatterns. The first wiring pattern is an intra-cell wiring pattern. Anexample of the cell is cell 202E of FIG. 2E. The cell includes first andsecond side boundaries which are substantially parallel and extend in afirst direction. An example of the first direction is the verticaldirection. Examples of the first and second side boundaries arecorresponding side boundaries 204B and 204D. An example of theintra-cell wiring pattern is intra-cell wiring pattern 206. An exampleof the second wiring pattern is p-pin pattern 208″. From block 502, flowproceeds to block 504.

At block 504, the intra-cell wiring pattern is configured so that afirst end is located substantially a minimum boundary offset interior tothe first side boundary. An example of the minimum boundary offset isminimum boundary offset 221 of FIG. 2F. In some embodiments, the minimumboundary offset is substantially half of a minimum end-to-end spacingfor substantially collinear wiring patterns. An example of the minimumend-to-end spacing is minimum end-to-end gap 220 of FIG. 2F. In someembodiments, the intra-cell wiring pattern is further configured so thata second end of the intra-cell wiring pattern is located substantiallythe minimum boundary offset from the second side boundary of the cell.

In some embodiments, the intra-cell wiring pattern is further configuredto leave a gap between a second end of the intra-cell wiring pattern andthe second side boundary of the cell. In some embodiments, a size of thegap in the second direction is substantially greater than the minimumboundary offset. In such embodiments, an example of the cell is cell232F of FIG. 2F, an example of the second side boundary is side boundary232B, an example of the intra-cell wiring pattern is wiring pattern 242′of FIG. 2F and an example of the gap is gap 243 of FIG. 2E. In someembodiments, the method further includes substantially filling the gapwith a dummy pattern; configuring the dummy pattern so that a first endthereof substantially abuts the second end of the wiring pattern; andfurther configuring the dummy pattern so that a second end thereof islocated substantially the minimum boundary offset interior to the secondside boundary. An example of the dummy pattern is dummy pattern 243′.

In some embodiments, the intra-cell wiring pattern is a first intra-cellwiring pattern, and the method further includes: adding, to the cell, athird wiring pattern which is a second intra-cell wiring pattern andwhich extends in the second direction; and adding, to the cell, a cutpattern which extends in the first direction and which, in effect,divides the second intra-cell wiring pattern into first and secondportions. First ends of the first and second portions of the secondintra-cell wiring pattern are located proximal to the cut pattern. Anexample of the second intra-cell wiring pattern before the addition ofthe cut pattern is wiring pattern 216 of FIG. 2A. An example of the cutpattern is cut pattern 228C of FIG. 2B. Examples of the first and secondportions of the second wiring pattern are corresponding wiring patterns216A and 216B of FIG. 2B. In some embodiments, the first portion has asecond end which is distal to the cut pattern; and the second portion ofthe second intra-cell wiring pattern is configured to leave a gap (217A)between the second end and the second side boundary. In someembodiments, a size of the gap (217A) in the second direction issubstantially greater than the minimum boundary offset. An example ofthe gap is gap 217A of FIG. 2C. In some embodiments, the method furtherincludes substantially filling the gap with a dummy pattern (217A′);configuring the dummy pattern so that a first end thereof substantiallyabuts a second end of the second wiring pattern; and further configuringthe dummy pattern so that a second end thereof is located substantiallythe minimum boundary offset interior to the second side boundary. Anexample of the dummy pattern is dummy pattern 217A′ of FIG. 2F.

From block 504, flow proceeds to block 506. At block 506, the secondwiring pattern is configured so that a portion thereof has a first endwhich extends exterior to the first side boundary by a protrusion lengthwhich is substantially greater than the minimum boundary offset. Anexample of the portion which extends exterior is portion 208P of FIG.2E. In some embodiments, the second wiring pattern is configured toleave a gap between a second end thereof and the second side boundary. Asize of the gap in the second direction is substantially greater thanthe minimum boundary offset. An example of the gap is gap 209 of FIG.2C. In some embodiments, the method further includes: substantiallyfilling the gap with a dummy pattern; configuring the dummy pattern sothat a first end thereof substantially abuts a second end of the secondwiring pattern; and further configuring the dummy pattern so that asecond end thereof is located substantially the minimum boundary offsetinterior to the second side boundary. An example of the dummy pattern isdummy pattern 209′.

From block 506, flow proceeds to block 508. At block 508, based on thelayout diagram, at least one of (A) one or more semiconductor masks or(B) at least one component in a layer of a semiconductor device isfabricated. See discussion below of FIG. 7.

FIG. 6 is a flowchart of a method 600 of generating a layout diagram, inaccordance with some embodiments.

Method 600 is implementable, for example, using EDA system 800 (FIG. 8,discussed below), in accordance with some embodiments. Regarding method600, an example of the layout diagram is layout diagram 200F of FIG. 2F.

In FIG. 6, method 600 includes blocks 602-612. At block 602, a shell isgenerated which includes wiring patterns. The wiring patterns comprise afirst layer of metallization. The wiring patterns have a defaultarrangement which, relative to a first direction, has a first amount offree space. An example of the shell is shell 202A of FIG. 2A. Examplesof the wiring patterns are wiring patterns 206, 207, 208, 212 and 216 ofFIG. 2A. An example of the first layer of metallization is M0, as inFIGS. 2A-2F.

The wiring patterns have long axes which are substantially aligned withcorresponding tracks that extend in a first direction. An example of thefirst direction is the horizontal direction. Examples of the tracks areH-Tracks T(i−2), T(i−1), T(i), T(i+1) and T(i+2). The shell includesfirst and second side boundaries which are substantially parallel andextend in a second direction. An example of the second direction is thevertical direction. Examples of the first and second side boundaries arecorresponding side boundaries 204B and 204D. From block 602, flowproceeds to block 604.

At block 604, the shell is refined into a cell. An example of the cellis cell 202F of FIG. 2F. Block 604 includes blocks 608-612. Within block604, at block 608, one or more of the wiring patterns is selectivelyshrunk in the first direction, resulting in a second amount of freespace. The second amount of free space is greater than the first amountof free space. Examples of the one or more wiring patterns which getshrunk are wiring patterns 208, 212 and 216 of FIG. 2A, resulting incorresponding gaps 209, 213A, 213B, 217A and 217B as well ascorresponding wiring patterns 208′, 212′ and 216′ of FIG. 2C. An exampleof the second amount of free space is the amount of free space in cell202C of FIG. 2C, which (by inspection) is greater than the amount offree space in shell 202A of FIG. 2A. From block 608, flow proceeds toblock 610.

At block 610, one or more chosen ones of the wiring patterns (chosenpatterns) are increased in the first direction in order to facilitateconnection to corresponding one or more wiring patterns included in asecond layer of metallization. An example of a chosen pattern is pinpattern 208′ of FIG. 2D. An example of the second layer of metallizationis M1, as in FIG. 2D. From block 610, flow proceeds to block 612. Insome embodiments, an example of a chosen patterns is a trans-boundaryintra-cell wiring pattern. In some embodiments, the method furtherincludes adding one or more via patterns (224, 244) representingcorrespondingly one or more connections between the corresponding one ormore chosen patterns of the first layer of metallization and thecorresponding one or more wiring patterns included in the second layerof metallization. An example of the via pattern is via pattern 224.

In some embodiments, the cell includes: first (right=204B) and second(left=204D) side boundaries which are substantially parallel and extendin a second direction (vertical). An example of the second direction isthe vertical direction. Examples of the first and second side boundariesare corresponding first side boundary 204B and second side boundary204D. In some embodiments, the increasing includes expanding, in thefirst direction (horizontal), a given one of the chosen patterns so thata portion thereof has a first end which extends exterior to the firstside boundary by a protrusion length which is substantially greater thanthe minimum boundary offset. An example of a chosen pattern is pinpattern 208′ of FIG. 2D, resulting in p-pin pattern 208″ of FIG. 2E,which has a portion 208P which extends exterior to side boundary 204B ofcell 202E.

At block 612, the free space (again, relative to the correspondingtracks) is backfilled with dummy patterns. Examples of the dummypatterns are dummy patterns 209′, 213A′, 213B,′ 217A′ and 217B′ whichsubstantially fill corresponding gaps 209, 213A, 213B, 217A and 217B.From block 612, flow leaves block 604.

In some embodiments, the refining further includes selectively removingan entirety of one (207) of the wiring patterns (207, 208, 212, 216,237, 238, 242 and 246); so as to leave the corresponding track empty;and the backfilling the free space includes backfilling the empty trackwith a wiring pattern which is a feedthrough pattern that extends in thefirst direction across an entirety of cell (202E) as well as exterior tothe first (right=204B) and second (left=204D) side boundaries. Anexample of a wiring pattern removed in its entirety is wiring pattern207 of FIG. 2A. An example of the feedthrough pattern is feedthroughpattern 248 of FIG. 2E, resulting in p-pin pattern 208″ of FIG. 2E,which has portions that extend exterior to side boundary 204B andexterior to side boundary 204D.

From block 604, flow proceeds to block 606. At block 606, based on thelayout diagram, at least one of (A) one or more semiconductor masks or(B) at least one component in a layer of a semiconductor device isfabricated. See discussion below of FIG. 7.

FIG. 7 is a block diagram of an electronic design automation (EDA) EDAsystem 700 in accordance with some embodiments.

In some embodiments, EDA system 700 includes an APR system. Methodsdescribed herein of designing layout diagrams represent wire routingarrangements, in accordance with one or more embodiments, areimplementable, for example, using EDA system 700, in accordance withsome embodiments.

In some embodiments, EDA system 700 is a general purpose computingdevice including a hardware processor 702 and a non-transitory,computer-readable storage medium 704. Storage medium 704, amongst otherthings, is encoded with, i.e., stores, computer program code 706, wherecomputer program code 706 is a set of computer-executable instructions.Execution of computer program code 706 by processor 702 represents (atleast in part) an EDA tool which implements a portion or all of, e.g.,the methods described herein in accordance with one or more(hereinafter, the noted processes and/or methods).

Processor 702 is electrically coupled to computer-readable storagemedium 704 via a bus 708. Processor 702 is also electrically coupled toan I/O interface 710 by bus 708. A network interface 712 is alsoelectrically connected to processor 702 via bus 708. Network interface712 is connected to a network 714, so that processor 702 andcomputer-readable storage medium 704 are capable of connecting toexternal elements via network 714. Processor 702 is configured toexecute computer program code 706 encoded in computer-readable storagemedium 704 in order to cause EDA system 700 to be usable for performinga portion or all of the noted processes and/or methods. In one or moreembodiments, processor 702 is a central processing unit (CPU), amulti-processor, a distributed processing system, an applicationspecific integrated circuit (ASIC), and/or a suitable processing unit.

In one or more embodiments, computer-readable storage medium 704 is anelectronic, magnetic, optical, electromagnetic, infrared, and/or asemiconductor system (or apparatus or device). For example,computer-readable storage medium 704 includes a semiconductor orsolid-state memory, a magnetic tape, a removable computer diskette, arandom access memory (RAM), a read-only memory (ROM), a rigid magneticdisk, and/or an optical disk. In one or more embodiments using opticaldisks, computer-readable storage medium 704 includes a compact disk-readonly memory (CD-ROM), a compact disk-read/write (CD-R/W), and/or adigital video disc (DVD).

In one or more embodiments, storage medium 704 stores computer programcode 706 configured to cause EDA system 700 (where such executionrepresents (at least in part) the EDA tool) to be usable for performinga portion or all of the noted processes and/or methods. In one or moreembodiments, storage medium 704 also stores information whichfacilitates performing a portion or all of the noted processes and/ormethods. In one or more embodiments, storage medium 704 stores library707 of standard cells including such standard cells corresponding tocells disclosed herein.

EDA system 700 includes I/O interface 710. I/O interface 710 is coupledto external circuitry. In one or more embodiments, I/O interface 710includes a keyboard, keypad, mouse, trackball, trackpad, touchscreen,and/or cursor direction keys for communicating information and commandsto processor 702.

EDA system 700 also includes network interface 712 coupled to processor702. Network interface 712 allows EDA system 700 to communicate withnetwork 714, to which one or more other computer systems are connected.Network interface 712 includes wireless network interfaces such asBLUETOOTH, WIFI, WIMAX, GPRS, or WCDMA; or wired network interfaces suchas ETHERNET, USB, or IEEE-1364. In one or more embodiments, a portion orall of noted processes and/or methods, is implemented in two or moresystems 700.

EDA system 700 is configured to receive information through I/Ointerface 710. The information received through I/O interface 710includes one or more of instructions, data, design rules, libraries ofstandard cells, and/or other parameters for processing by processor 702.The information is transferred to processor 702 via bus 708. EDA system700 is configured to receive information related to a UI through I/Ointerface 710. The information is stored in computer-readable medium 704as user interface (UI) 742.

In some embodiments, a portion or all of the noted processes and/ormethods is implemented as a standalone software application forexecution by a processor. In some embodiments, a portion or all of thenoted processes and/or methods is implemented as a software applicationthat is a part of an additional software application. In someembodiments, a portion or all of the noted processes and/or methods isimplemented as a plug-in to a software application. In some embodiments,at least one of the noted processes and/or methods is implemented as asoftware application that is a portion of an EDA tool. In someembodiments, a portion or all of the noted processes and/or methods isimplemented as a software application that is used by EDA system 700. Insome embodiments, a layout diagram which includes standard cells isgenerated using a tool such as VIRTUOSO® available from CADENCE DESIGNSYSTEMS, Inc., or another suitable layout generating tool.

In some embodiments, the processes are realized as functions of aprogram stored in a non-transitory computer readable recording medium.Examples of a non-transitory computer readable recording medium include,but are not limited to, external/removable and/or internal/built-instorage or memory unit, e.g., one or more of an optical disk, such as aDVD, a magnetic disk, such as a hard disk, a semiconductor memory, suchas a ROM, a RAM, a memory card, and the like.

FIG. 8 is a block diagram of semiconductor device, e.g., an integratedcircuit (IC), manufacturing system 800, and an IC manufacturing flowassociated therewith, in accordance with some embodiments.

In some embodiments, based on a layout diagram, at least one of (A) oneor more semiconductor masks or (B) at least one component in a layer ofa semiconductor integrated circuit is fabricated using manufacturingsystem 800.

In FIG. 8, IC manufacturing system 800 includes entities, such as adesign house 820, a mask house 830, and an IC manufacturer/fabricator(“fab”) 850, that interact with one another in the design, development,and manufacturing cycles and/or services related to manufacturing an ICdevice 860. The entities in system 800 are connected by a communicationsnetwork. In some embodiments, the communications network is a singlenetwork. In some embodiments, the communications network is a variety ofdifferent networks, such as an intranet and the Internet. Thecommunications network includes wired and/or wireless communicationchannels. Each entity interacts with one or more of the other entitiesand provides services to and/or receives services from one or more ofthe other entities. In some embodiments, two or more of design house820, mask house 830, and IC fab 850 is owned by a single larger company.In some embodiments, two or more of design house 820, mask house 830,and IC fab 850 coexist in a common facility and use common resources.

Design house (or design team) 820 generates an IC design layout diagram822. IC design layout diagram 822 includes various geometrical patternsdesigned for an IC device 860. The geometrical patterns correspond topatterns of metal, oxide, or semiconductor layers that make up thevarious components of IC device 860 to be fabricated. The various layerscombine to form various IC features. For example, a portion of IC designlayout diagram 822 includes various IC features, such as an activeregion, gate electrode, source and drain, metal lines or vias of aninterlayer interconnection, and openings for bonding pads, to be formedin a semiconductor substrate (such as a silicon wafer) and variousmaterial layers disposed on the semiconductor substrate. Design house820 implements a proper design procedure to form IC design layoutdiagram 822. The design procedure includes one or more of logic design,physical design or place and route. IC design layout diagram 822 ispresented in one or more data files having information of thegeometrical patterns. For example, IC design layout diagram 822 can beexpressed in a GDSII file format or DFII file format.

Mask house 830 includes data preparation 832 and mask fabrication 844.Mask house 830 uses IC design layout diagram 822 to manufacture one ormore masks 845 to be used for fabricating the various layers of ICdevice 860 according to IC design layout diagram 822. Mask house 830performs mask data preparation 832, where IC design layout diagram 822is translated into a representative data file (“RDF”). Mask datapreparation 832 provides the RDF to mask fabrication 844. Maskfabrication 844 includes a mask writer. A mask writer converts the RDFto an image on a substrate, such as a mask (reticle) 845 or asemiconductor wafer 853. The design layout diagram 822 is manipulated bymask data preparation 832 to comply with particular characteristics ofthe mask writer and/or requirements of IC fab 850. In FIG. 8, mask datapreparation 832 and mask fabrication 844 are illustrated as separateelements. In some embodiments, mask data preparation 832 and maskfabrication 844 can be collectively referred to as mask datapreparation.

In some embodiments, mask data preparation 832 includes opticalproximity correction (OPC) which uses lithography enhancement techniquesto compensate for image errors, such as those that can arise fromdiffraction, interference, other process effects and the like. OPCadjusts IC design layout diagram 822. In some embodiments, mask datapreparation 832 includes further resolution enhancement techniques(RET), such as off-axis illumination, sub-resolution assist features,phase-shifting masks, other suitable techniques, and the like orcombinations thereof. In some embodiments, inverse lithographytechnology (ILT) is also used, which treats OPC as an inverse imagingproblem.

In some embodiments, mask data preparation 832 includes a mask rulechecker (MRC) that checks the IC design layout diagram 822 that hasundergone processes in OPC with a set of mask creation rules whichcontain certain geometric and/or connectivity restrictions to ensuresufficient margins, to account for variability in semiconductormanufacturing processes, and the like. In some embodiments, the MRCmodifies the IC design layout diagram 822 to compensate for limitationsduring mask fabrication 844, which may undo part of the modificationsperformed by OPC in order to meet mask creation rules.

In some embodiments, mask data preparation 832 includes lithographyprocess checking (LPC) that simulates processing that will beimplemented by IC fab 850 to fabricate IC device 860. LPC simulates thisprocessing based on IC design layout diagram 822 to create a simulatedmanufactured device, such as IC device 860. The processing parameters inLPC simulation can include parameters associated with various processesof the IC manufacturing cycle, parameters associated with tools used formanufacturing the IC, and/or other aspects of the manufacturing process.LPC takes into account various factors, such as aerial image contrast,depth of focus (“DOF”), mask error enhancement factor (“MEEF”), othersuitable factors, and the like or combinations thereof. In someembodiments, after a simulated manufactured device has been created byLPC, if the simulated device is not close enough in shape to satisfydesign rules, OPC and/or MRC are be repeated to further refine IC designlayout diagram 822.

It should be understood that the above description of mask datapreparation 832 has been simplified for the purposes of clarity. In someembodiments, data preparation 832 includes additional features such as alogic operation (LOP) to modify the IC design layout diagram 822according to manufacturing rules. Additionally, the processes applied toIC design layout diagram 822 during data preparation 832 may be executedin a variety of different orders.

After mask data preparation 832 and during mask fabrication 844, a mask845 or a group of masks 845 are fabricated based on the modified ICdesign layout diagram 822. In some embodiments, mask fabrication 844includes performing one or more lithographic exposures based on ICdesign layout diagram 822. In some embodiments, an electron-beam(e-beam) or a mechanism of multiple e-beams is used to form a pattern ona mask (photomask or reticle) 845 based on the modified IC design layoutdiagram 822. Mask 845 can be formed in various technologies. In someembodiments, mask 845 is formed using binary technology. In someembodiments, a mask pattern includes opaque regions and transparentregions. A radiation beam, such as an ultraviolet (UV) beam, used toexpose the image sensitive material layer (e.g., photoresist) which hasbeen coated on a wafer, is blocked by the opaque region and transmitsthrough the transparent regions. In one example, a binary mask versionof mask 845 includes a transparent substrate (e.g., fused quartz) and anopaque material (e.g., chromium) coated in the opaque regions of thebinary mask. In another example, mask 845 is formed using a phase shifttechnology. In a phase shift mask (PSM) version of mask 845, variousfeatures in the pattern formed on the phase shift mask are configured tohave proper phase difference to enhance the resolution and imagingquality. In various examples, the phase shift mask can be attenuated PSMor alternating PSM. The mask(s) generated by mask fabrication 844 isused in a variety of processes. For example, such a mask(s) is used inan ion implantation process to form various doped regions insemiconductor wafer 853, in an etching process to form various etchingregions in semiconductor wafer 853, and/or in other suitable processes.

IC fab 850 includes wafer fabrication 852. IC fab 850 is an ICfabrication business that includes one or more manufacturing facilitiesfor the fabrication of a variety of different IC products. In someembodiments, IC Fab 850 is a semiconductor foundry. For example, theremay be a manufacturing facility for the front end fabrication of aplurality of IC products (front-end-of-line (FEOL) fabrication), while asecond manufacturing facility may provide the back end fabrication forthe interconnection and packaging of the IC products (back-end-of-line(BEOL) fabrication), and a third manufacturing facility may provideother services for the foundry business.

IC fab 850 uses mask(s) 845 fabricated by mask house 830 to fabricate ICdevice 860. Thus, IC fab 850 at least indirectly uses IC design layoutdiagram 822 to fabricate IC device 860. In some embodiments,semiconductor wafer 853 is fabricated by IC fab 850 using mask(s) 845 toform IC device 860. In some embodiments, the IC fabrication includesperforming one or more lithographic exposures based at least indirectlyon IC design layout diagram 822. Semiconductor wafer 853 includes asilicon substrate or other proper substrate having material layersformed thereon. Semiconductor wafer 853 further includes one or more ofvarious doped regions, dielectric features, multilevel interconnects,and the like (formed at subsequent manufacturing steps).

Details regarding an integrated circuit (IC) manufacturing system (e.g.,system 800 of FIG. 8), and an IC manufacturing flow associated therewithare found, e.g., in U.S. Pat. No. 9,256,709, granted Feb. 9, 2016, U.S.Pre-Grant Publication No. 20150278429, published Oct. 1, 2015, U.S.Pre-Grant Publication No. 20140040838, published Feb. 6, 2014, and U.S.Pat. No. 7,260,442, granted Aug. 21, 2007, the entireties of each ofwhich are hereby incorporated by reference. It will be readily seen byone of ordinary skill in the art that one or more of the disclosedembodiments fulfill one or more of the advantages set forth above. Afterreading the foregoing specification, one of ordinary skill will be ableto affect various changes, substitutions of equivalents and variousother embodiments as broadly disclosed herein. It is therefore intendedthat the protection granted hereon be limited only by the definitioncontained in the appended claims and equivalents thereof.

In an embodiment, a semiconductor device includes a cell region whichincludes components representing a circuit, the components beingarranged such that a virtual perimeter is drawable around substantiallyall of the components, the virtual perimeter being rectangular andincluding first and second virtual side boundaries which aresubstantially parallel and extend in a first direction, the componentsof the cell region including: a first conductor which is an intra-cellconductor of a first signal that is internal to the circuit; theintra-cell conductor extending in a second direction, the seconddirection being substantially perpendicular to the first direction; anda first end of the intra-cell conductor being substantially a minimumvirtual boundary offset interior to the first virtual side boundary; anda second conductor of a second signal of the circuit; the secondconductor extending in the second direction; a portion of the secondconductor having a first end which extends exterior to the first virtualside boundary by a protrusion length which is substantially greater thanthe minimum virtual boundary offset; and a second end of the secondconductor being receded interior to the second virtual side boundary bya first gap, a size of the first gap in the second direction beingsubstantially greater than the minimum virtual boundary offset.

In an embodiment, the minimum virtual boundary offset is substantiallyhalf of a minimum end-to-end spacing for substantially collinear wiringpatterns.

In an embodiment, the components of the cell region further include: adummy structure which is substantially collinear with the secondconductor and which substantially fills the first gap; a first end ofthe dummy structure substantially abutting a second end of the secondconductor; and a second end of the dummy structure being substantiallythe minimum virtual boundary offset interior to the second virtual sideboundary.

In an embodiment, a second end of the intra-cell conductor beingsubstantially the minimum virtual boundary offset from the secondvirtual side boundary.

In an embodiment, the components of the cell region further include: athird conductor of a third signal of the circuit; the third conductorextending in the second direction; and a first end of the thirdconductor being receded interior to the first virtual side boundary by asecond gap, a size of the second gap in the second direction beingsubstantially greater than the minimum virtual boundary offset.

In an embodiment, the components of the cell region further include: adummy structure which is substantially collinear with the thirdconductor and which substantially fills the second gap; a first end ofthe dummy structure substantially abutting the first end of the thirdconductor; and a second end of the dummy structure being substantiallythe minimum virtual boundary offset interior to the first virtual sideboundary.

In an embodiment, a second end of the third conductor being recededinterior to the second virtual side boundary by a third gap, a size ofthe third gap in the second direction being substantially greater thanthe minimum virtual boundary offset.

In an embodiment, the components of the cell region further include: adummy structure which is substantially collinear with the thirdconductor and which substantially fills the third gap; a first end ofthe dummy structure substantially abutting the second end of the thirdconductor; and a second end of the dummy structure being substantiallythe minimum virtual boundary offset interior to the second virtual sideboundary.

In an embodiment, a semiconductor device includes a first cell regionwhich includes first components representing a first circuit and whichare arranged such that a first virtual perimeter is drawable aroundsubstantially all of the first components, the first virtual perimeterbeing rectangular and including first and second virtual side boundarieswhich are substantially parallel and extend in a first direction, thefirst components of the first cell region further including: a firstconductor which is an intra-cell conductor of a first signal that isinternal to the first circuit; the intra-cell conductor extending in asecond direction, the second direction being substantially perpendicularto the first direction; and a first end of the intra-cell conductorbeing substantially a minimum virtual boundary offset interior to thefirst virtual side boundary of the first cell region; a minority portionof a second conductor of a first signal of a second circuit; the secondconductor extending in the second direction, the minority portion and amajority portion thereof correspondingly being internal and external tothe first cell region; the second circuit being substantiallyrepresented by second components of a second cell region that includethe majority portion of the second conductor and which are arranged suchthat a second virtual perimeter is drawable around substantially all ofthe second components of the second cell region; the minority portion ofthe second conductor having a first end which extends interior to thefirst virtual side boundary of the first cell region by a protrusionlength which is substantially greater than the minimum virtual boundaryoffset; and a third conductor of a second signal of the first circuit;the third conductor extending in the second direction and beingsubstantially collinear with the second conductor; and a first end ofthe second conductor being substantially receded interior to the firstvirtual side boundary of the first cell region by an intrusion length,the intrusion length being equal to the protrusion length plus a minimumend-to-end spacing for substantially collinear wiring patterns.

In an embodiment, a second end of the second conductor is recededinterior to a second virtual side boundary of the first cell region by afirst gap, a size of the first gap in the second direction beingsubstantially greater than the minimum virtual boundary offset.

In an embodiment, the first components of the first cell region furtherinclude: a fourth conductor of a third signal of the first circuit; thefourth conductor extending in the second direction and beingsubstantially collinear with the third conductor; and a first end of thefourth conductor being substantially separated from a second end of thethird conductor by a minimum end-to-end spacing for substantiallycollinear wiring patterns.

In an embodiment, a second end of the fourth conductor being recededinterior to a second virtual side boundary of the first cell region by athird gap.

In an embodiment, a size of the third gap in the second direction issubstantially greater than the minimum virtual boundary offset.

In an embodiment, the first components of the first cell region furtherinclude: a dummy structure which is substantially collinear with thefourth conductor and which substantially fills the third gap; a firstend of the dummy structure substantially abutting the second end of thefourth conductor; and a second end of the dummy structure beingsubstantially the minimum virtual boundary offset interior to the secondvirtual side boundary.

In an embodiment, a semiconductor device includes a first cell regionwhich includes first components representing a first circuit and whichare arranged such that a first virtual perimeter is drawable aroundsubstantially all of the first components, the first virtual perimeterbeing rectangular and including first and second virtual side boundarieswhich are substantially parallel and extend in a first direction, thefirst components of the first cell region further including: a firstconductor which is an intra-cell conductor of a first signal that isinternal to the first circuit; the intra-cell conductor extending in asecond direction, the second direction being substantially perpendicularto the first direction; and a first end of the intra-cell conductorbeing substantially a minimum virtual boundary offset interior to thefirst virtual side boundary of the first cell region; a second conductorof a second signal of the first circuit; the second conductor extendingin the second direction; and a first end of the second conductor beingsubstantially receded interior to the first virtual side boundary of thefirst cell region by a first length, the first length beingsubstantially greater than the minimum virtual boundary offset andsufficient to accommodate a protruding portion of a fourth conductor ofa second cell region; and a third conductor of a third signal of thefirst circuit; the third conductor extending in the second direction andbeing substantially collinear with the second conductor; a first end ofthe third conductor being proximal to a second end of the secondconductor; and a second end of the third conductor being substantiallythe minimum virtual boundary offset interior to the second virtual sideboundary.

In an embodiment, a second end of the third conductor being recededinterior to a second virtual side boundary of the first cell region by athird gap.

In an embodiment, a size of the third gap in the second direction issubstantially greater than the minimum virtual boundary offset.

In an embodiment, the first components of the first cell region furtherinclude: a minority portion of the fourth conductor, the minorityportion of the fourth conductor being a conductor of a first signal of asecond circuit; the second conductor extending in the second directionand being substantially collinear with the second conductor, theminority portion and a majority portion thereof correspondingly beinginternal and external to the first cell region; the second circuit beingsubstantially represented by second components of a second cell regionthat include the majority portion of the second conductor and which arearranged such that a second virtual perimeter is drawable aroundsubstantially all of the second components of the second cell region;and the minority portion of the second conductor having a first endwhich extends interior to the first virtual side boundary of the firstcell region to be adjacent to the first end of the second conductor.

In an embodiment, the first end of the minority portion is separatedfrom the first end of the second conductor being by a first gap, a sizeof the first gap in the second direction being the minimum virtualboundary offset.

In an embodiment, the first end of the minority portion of the secondconductor extends interior to the first virtual side boundary of thefirst cell region by a protrusion length which is substantially greaterthan the minimum virtual boundary offset.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device comprising: a cell regionwhich includes components representing a circuit, the components beingarranged such that a virtual perimeter is drawable around substantiallyall of the components, the virtual perimeter being rectangular andincluding first and second virtual side boundaries which aresubstantially parallel and extend in a first direction; and thecomponents of the cell region including: a first conductor which is anintra-cell conductor of a first signal that is internal to the circuit;the intra-cell conductor extending in a second direction, the seconddirection being substantially perpendicular to the first direction; anda first end of the intra-cell conductor being substantially a minimumvirtual boundary offset interior to the first virtual side boundary; anda second conductor of a second signal of the circuit; the secondconductor extending in the second direction; a portion of the secondconductor having a first end which extends exterior to the first virtualside boundary by a protrusion length which is substantially greater thanthe minimum virtual boundary offset; and a second end of the secondconductor being receded interior to the second virtual side boundary bya first gap, a size of the first gap in the second direction beingsubstantially greater than the minimum virtual boundary offset.
 2. Thesemiconductor device of claim 1, wherein: the minimum virtual boundaryoffset is substantially half of a minimum end-to-end spacing forsubstantially collinear wiring patterns.
 3. The semiconductor device ofclaim 1, wherein the components of the cell region further include: adummy structure which is substantially collinear with the secondconductor and which substantially fills the first gap; a first end ofthe dummy structure substantially abutting a second end of the secondconductor; and a second end of the dummy structure being substantiallythe minimum virtual boundary offset interior to the second virtual sideboundary.
 4. The semiconductor device of claim 1, wherein: a second endof the intra-cell conductor being substantially the minimum virtualboundary offset from the second virtual side boundary.
 5. Thesemiconductor device of claim 1, wherein the components of the cellregion further include: a third conductor of a third signal of thecircuit; the third conductor extending in the second direction; and afirst end of the third conductor being receded interior to the firstvirtual side boundary by a second gap, a size of the second gap in thesecond direction being substantially greater than the minimum virtualboundary offset.
 6. The semiconductor device of claim 5, wherein thecomponents of the cell region further include: a dummy structure whichis substantially collinear with the third conductor and whichsubstantially fills the second gap; a first end of the dummy structuresubstantially abutting the first end of the third conductor; and asecond end of the dummy structure being substantially the minimumvirtual boundary offset interior to the first virtual side boundary. 7.The semiconductor device of claim 5, wherein: a second end of the thirdconductor being receded interior to the second virtual side boundary bya third gap, a size of the third gap in the second direction beingsubstantially greater than the minimum virtual boundary offset.
 8. Thesemiconductor device of claim 7, wherein the components of the cellregion further include: a dummy structure which is substantiallycollinear with the third conductor and which substantially fills thethird gap; a first end of the dummy structure substantially abutting thesecond end of the third conductor; and a second end of the dummystructure being substantially the minimum virtual boundary offsetinterior to the second virtual side boundary.
 9. A semiconductor devicecomprising: a first cell region which includes first componentsrepresenting a first circuit and which are arranged such that a firstvirtual perimeter is drawable around substantially all of the firstcomponents, the first virtual perimeter being rectangular and includingfirst and second virtual side boundaries which are substantiallyparallel and extend in a first direction; and the first components ofthe first cell region further including: a first conductor which is anintra-cell conductor of a first signal that is internal to the firstcircuit; the intra-cell conductor extending in a second direction, thesecond direction being substantially perpendicular to the firstdirection; and a first end of the intra-cell conductor beingsubstantially a minimum virtual boundary offset interior to the firstvirtual side boundary of the first cell region; a minority portion of asecond conductor of a first signal of a second circuit; the secondconductor extending in the second direction, the minority portion and amajority portion thereof correspondingly being internal and external tothe first cell region; the second circuit being substantiallyrepresented by second components of a second cell region that includethe majority portion of the second conductor and which are arranged suchthat a second virtual perimeter is drawable around substantially all ofthe second components of the second cell region; the minority portion ofthe second conductor having a first end which extends interior to thefirst virtual side boundary of the first cell region by a protrusionlength which is substantially greater than the minimum virtual boundaryoffset; and a third conductor of a second signal of the first circuit;the third conductor extending in the second direction and beingsubstantially collinear with the second conductor; and a first end ofthe second conductor being substantially receded interior to the firstvirtual side boundary of the first cell region by an intrusion length,the intrusion length being equal to the protrusion length plus a minimumend-to-end spacing for substantially collinear wiring patterns.
 10. Thesemiconductor device of claim 9, wherein: a second end of the secondconductor is receded interior to a second virtual side boundary of thefirst cell region by a first gap, a size of the first gap in the seconddirection being substantially greater than the minimum virtual boundaryoffset.
 11. The semiconductor device of claim 9, wherein the firstcomponents of the first cell region further include: a fourth conductorof a third signal of the first circuit; the fourth conductor extendingin the second direction and being substantially collinear with the thirdconductor; and a first end of the fourth conductor being substantiallyseparated from a second end of the third conductor by a minimumend-to-end spacing for substantially collinear wiring patterns.
 12. Thesemiconductor device of claim 11, wherein: a second end of the fourthconductor is receded interior to a second virtual side boundary of thefirst cell region by a third gap.
 13. The semiconductor device of claim12, wherein: a size of the third gap in the second direction issubstantially greater than the minimum virtual boundary offset.
 14. Thesemiconductor device of claim 13, wherein the first components of thefirst cell region further include: a dummy structure which issubstantially collinear with the fourth conductor and whichsubstantially fills the third gap; a first end of the dummy structuresubstantially abutting the second end of the fourth conductor; and asecond end of the dummy structure being substantially the minimumvirtual boundary offset interior to the second virtual side boundary.15. A semiconductor device comprising: a first cell region whichincludes first components representing a first circuit and which arearranged such that a first virtual perimeter is drawable aroundsubstantially all of the first components, the first virtual perimeterbeing rectangular and including first and second virtual side boundarieswhich are substantially parallel and extend in a first direction, thefirst components of the first cell region further including: a firstconductor which is an intra-cell conductor of a first signal that isinternal to the first circuit; the intra-cell conductor extending in asecond direction, the second direction being substantially perpendicularto the first direction; and a first end of the intra-cell conductorbeing substantially a minimum virtual boundary offset interior to thefirst virtual side boundary of the first cell region; a second conductorof a second signal of the first circuit; the second conductor extendingin the second direction; and a first end of the second conductor beingsubstantially receded interior to the first virtual side boundary of thefirst cell region by a first length, the first length beingsubstantially greater than the minimum virtual boundary offset andsufficient to accommodate a protruding portion of a fourth conductor ofa second cell region; and a third conductor of a third signal of thefirst circuit; the third conductor extending in the second direction andbeing substantially collinear with the second conductor; a first end ofthe third conductor being proximal to a second end of the secondconductor; and a second end of the third conductor being substantiallythe minimum virtual boundary offset interior to the second virtual sideboundary.
 16. The semiconductor device of claim 15, wherein: a secondend of the third conductor being receded interior to a second virtualside boundary of the first cell region by a third gap.
 17. Thesemiconductor device of claim 16, wherein: a size of the third gap inthe second direction is substantially greater than the minimum virtualboundary offset.
 18. The semiconductor device of claim 15, wherein thefirst components of the first cell region further include: a minorityportion of the fourth conductor, the minority portion of the fourthconductor being a conductor of a first signal of a second circuit; thesecond conductor extending in the second direction and beingsubstantially collinear with the second conductor, the minority portionand a majority portion thereof correspondingly being internal andexternal to the first cell region; the second circuit beingsubstantially represented by second components of a second cell regionthat include the majority portion of the second conductor and which arearranged such that a second virtual perimeter is drawable aroundsubstantially all of the second components of the second cell region;and the minority portion of the second conductor having a first endwhich extends interior to the first virtual side boundary of the firstcell region to be adjacent to the first end of the second conductor. 19.The semiconductor device of claim 18, wherein: the first end of theminority portion is separated from the first end of the second conductorbeing by a first gap, a size of the first gap in the second directionbeing the minimum virtual boundary offset.
 20. The semiconductor deviceof claim 18, wherein: the first end of the minority portion of thesecond conductor extends interior to the first virtual side boundary ofthe first cell region by a protrusion length which is substantiallygreater than the minimum virtual boundary offset.